- 专利标题： Asymmetric Source and Drain Structures in Semiconductor Devices
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申请号： US17339054申请日： 2021-06-04
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公开(公告)号： US20210296497A1公开(公告)日： 2021-09-23
- 发明人: Yu-Lien Huang , Peng Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/3065 ; H01L29/66 ; H01L21/311 ; H01L21/321 ; H01L21/768
摘要：
The present disclosure provides semiconductor devices with asymmetric source/drain structures. In one example, a semiconductor device includes a first group of source/drain structures on a first group of fin structures on a substrate, a second group of source/drain structures on a second group of fin structures on the substrate, and a first gate structure and a second gate structure over the first and the second group of fin structures, respectively, the first and second groups of source/drain structures being proximate the first and second gate structures, respectively, wherein the first group of source/drain structures on the first group of fin structures has a first source/drain structure having a first vertical height different from a second vertical height of a second source/drain structure of the second group of source/drain structures on the second group of fin structures.
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