- 专利标题： PRECURSORS AND METHODS FOR PREPARING SILICON-CONTAINING FILMS
-
申请号： US17214701申请日： 2021-03-26
-
公开(公告)号： US20210301400A1公开(公告)日： 2021-09-30
- 发明人: SangJin LEE , DaHye KIM , Sungsil CHO , Seobong CHANG , Jae Eon PARK , Bryan C. HENDRIX , Thomas H. BAUM , SooJin LEE
- 申请人： ENTEGRIS, INC.
- 申请人地址： US MA Billerica
- 专利权人： ENTEGRIS, INC.
- 当前专利权人： ENTEGRIS, INC.
- 当前专利权人地址： US MA Billerica
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C07F7/10 ; C07F7/02 ; C23C16/40 ; C23C16/34 ; C23C16/50 ; H01L21/02
摘要：
Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.
信息查询
IPC分类:
