公开(公告)号：US20210082708A1

公开(公告)日：2021-03-18

申请号：US16952985

申请日：2020-11-19

申请人： ENTEGRIS, INC.

发明人： Sangbum HAN ,  Seobong CHANG ,  Bryan C. HENDRIX ,  Jae Eon PARK ,  Thomas H. BAUM

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/16 ,  C07F15/06 ,  C23C16/18

摘要： The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US20210395884A1

公开(公告)日：2021-12-23

申请号：US17356252

申请日：2021-06-23

申请人： ENTEGRIS, INC.

发明人： Sungsil CHO ,  DaHye KIM ,  SooJin LEE ,  Jae Eon PARK ,  Bryan C. HENDRIX ,  Philip S.H. CHEN ,  Shawn D. NGUYEN

IPC分类号： C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/52

摘要： Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

公开(公告)号：US20210301400A1

公开(公告)日：2021-09-30

申请号：US17214701

申请日：2021-03-26

申请人： ENTEGRIS, INC.

发明人： SangJin LEE ,  DaHye KIM ,  Sungsil CHO ,  Seobong CHANG ,  Jae Eon PARK ,  Bryan C. HENDRIX ,  Thomas H. BAUM ,  SooJin LEE

IPC分类号： C23C16/455 ,  C07F7/10 ,  C07F7/02 ,  C23C16/40 ,  C23C16/34 ,  C23C16/50 ,  H01L21/02

摘要： Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.