- 专利标题: SYSTEMS AND METHODS FOR FABRICATION OF SUPERCONDUCTING INTEGRATED CIRCUITS
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申请号: US17321819申请日: 2021-05-17
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公开(公告)号: US20210384406A1公开(公告)日: 2021-12-09
- 发明人: Shuiyuan Huang , Byong H. Oh , Douglas P. Stadtler , Edward G. Sterpka , Paul I. Bunyk , Jed D. Whittaker , Fabio Altomare , Richard G. Harris , Colin C. Enderud , Loren J. Swenson , Nicolas C. Ladizinsky , Jason J. Yao , Eric G. Ladizinsky
- 申请人: D-WAVE SYSTEMS INC.
- 申请人地址: CA Burnaby
- 专利权人: D-WAVE SYSTEMS INC.
- 当前专利权人: D-WAVE SYSTEMS INC.
- 当前专利权人地址: CA Burnaby
- 主分类号: H01L39/24
- IPC分类号: H01L39/24 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L27/18 ; H01L39/12
摘要:
Various techniques and apparatus permit fabrication of superconductive circuits. A superconducting integrated circuit comprising a superconducting stud via, a kinetic inductor, and a capacitor may be formed. Forming a superconducting stud via in a superconducting integrated circuit may include masking with a hard mask and masking with a soft mask. Forming a superconducting stud via in a superconducting integrated circuit may include depositing a dielectric etch stop layer. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by an electrical vernier. Interlayer misalignment in the fabrication of a superconducting integrated circuit may be measured by a chain of electrical verniers and a Wheatstone bridge. A superconducting integrated circuit with three or more metal layers may include an enclosed, matched, on-chip transmission line. A metal wiring layer in a superconducting integrated circuit may be encapsulated.
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