- 专利标题: DEPOSITION SYSTEM AND PROCESSING SYSTEM
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申请号: US17195900申请日: 2021-03-09
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公开(公告)号: US20220033962A1公开(公告)日: 2022-02-03
- 发明人: Suhwan Kim , Hyunjun Kim , Younglim Park , Dongkwan Baek , Hyungsuk Jung
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR SUWON-SI
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR SUWON-SI
- 优先权: KR10-2020-0095940 20200731
- 主分类号: C23C16/02
- IPC分类号: C23C16/02 ; C23C16/448 ; C23C16/44 ; C23C16/52
摘要:
A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.
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