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    DEPOSITION SYSTEM AND PROCESSING SYSTEM
    2.
    发明申请
    DEPOSITION SYSTEM AND PROCESSING SYSTEM 有权

    公开(公告)号：US20220033962A1

    公开(公告)日：2022-02-03

    申请号：US17195900

    申请日：2021-03-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Suhwan Kim ,  Hyunjun Kim ,  Younglim Park ,  Dongkwan Baek ,  Hyungsuk Jung

    IPC: C23C16/02 ,  C23C16/448 ,  C23C16/44 ,  C23C16/52

    Abstract: A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

    STORAGE DEVICE ALLOCATING UNIT ZONE REGIONS, AND METHOD OF OPERATING THE SAME
    3.
    发明申请
    STORAGE DEVICE ALLOCATING UNIT ZONE REGIONS, AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20240370188A1

    公开(公告)日：2024-11-07

    申请号：US18542119

    申请日：2023-12-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Suhwan Kim ,  Eunji Kang ,  Hyunkoo Kim ,  Dongki Kim ,  Sihoon Choi

    IPC: G06F3/06

    Abstract: A method of operating a storage device which communicates with a host device includes allocating a plurality of unit zone regions each having a unit zone size, each of the plurality of unit zone regions being mapped to at least one corresponding memory blocks among a plurality of memory blocks in the storage device and supporting a sequential write in compliance with a zoned namespace (ZNS) standard, receiving a first request indicating an allocation operation of a first zoned namespace in compliance with the ZNS standard from the host device, determining a first mapping ratio by dividing a first zone size of the first zoned namespace by the unit zone size, based on the first request, and storing the first mapping ratio in a zone metadata table of the storage device.

    DEPOSITION SYSTEM AND PROCESSING SYSTEM
    4.
    发明公开
    DEPOSITION SYSTEM AND PROCESSING SYSTEM 审中-公开

    公开(公告)号：US20240209495A1

    公开(公告)日：2024-06-27

    申请号：US18425048

    申请日：2024-01-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Suhwan Kim ,  Hyunjun Kim ,  Younglim Park ,  Dongkwan Baek ,  Hyungsuk Jung

    IPC: C23C16/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

    CPC classification number: C23C16/0245 ,  C23C16/4412 ,  C23C16/4482 ,  C23C16/52

    Abstract: A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

    DATA STORAGE DEVICES USING NON-VOLATILE MEMORY DEVICES AND OPERATING METHODS THEREOF
    7.
    发明公开
    DATA STORAGE DEVICES USING NON-VOLATILE MEMORY DEVICES AND OPERATING METHODS THEREOF 审中-公开

    公开(公告)号：US20230141861A1

    公开(公告)日：2023-05-11

    申请号：US18052344

    申请日：2022-11-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joonhyuck Shin ,  Suhwan Kim ,  Kilmo Choi

    IPC: G06F12/14 ,  G06F12/02 ,  G06F13/28

    CPC classification number: G06F12/1408 ,  G06F12/0246 ,  G06F13/28

    Abstract: An operating method of a data storge device including a buffer memory, a non-volatile memory, and a controller, includes receiving, from a host, an encryption request for data stored in the buffer memory, and performing an encryption operation in response to the encryption request, wherein the performing of the encryption operation comprises performing a program operation, the performing of the program operation comprises receiving a physical address of a buffer region of the non-volatile memory, generating encrypted data by causing an encryption module included in the controller to be in an on state to encrypt the data stored in the buffer memory, and programming the encrypted data in the buffer region of the non-volatile memory based on the physical address.

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