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公开(公告)号：US20220033962A1
公开(公告)日：2022-02-03
申请号：US17195900
申请日：2021-03-09
发明人： Suhwan Kim , Hyunjun Kim , Younglim Park , Dongkwan Baek , Hyungsuk Jung
IPC分类号： C23C16/02 , C23C16/448 , C23C16/44 , C23C16/52
摘要： A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.
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公开(公告)号：US20230005925A1
公开(公告)日：2023-01-05
申请号：US17702190
申请日：2022-03-23
发明人： Kyooho Jung , Dongkwan Baek , Cheoljin Cho
IPC分类号： H01L27/108
摘要： A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
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公开(公告)号：US20240209495A1
公开(公告)日：2024-06-27
申请号：US18425048
申请日：2024-01-29
发明人： Suhwan Kim , Hyunjun Kim , Younglim Park , Dongkwan Baek , Hyungsuk Jung
IPC分类号： C23C16/02 , C23C16/44 , C23C16/448 , C23C16/52
CPC分类号： C23C16/0245 , C23C16/4412 , C23C16/4482 , C23C16/52
摘要： A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.
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公开(公告)号：US20240164085A1
公开(公告)日：2024-05-16
申请号：US18416313
申请日：2024-01-18
发明人： Kyooho Jung , Dongkwan Baek , Cheoljin Cho
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033 , H10B12/34
摘要： A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
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公开(公告)号：US11910592B2
公开(公告)日：2024-02-20
申请号：US17702190
申请日：2022-03-23
发明人： Kyooho Jung , Dongkwan Baek , Cheoljin Cho
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033 , H10B12/34
摘要： A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
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