Provided is a semiconductor storage device including: a substrate having a substrate surface extending in a first direction and a second direction intersecting the first direction; a plurality of first region memory cells provided in a plurality of layers provided parallel to the substrate surface and in a third direction, the first region memory cells being provided above a rectangular shaped first region provided on the substrate surface, the first region having a first side parallel to the first direction and a second side parallel to the second direction when viewed from the third direction intersecting the first direction and the second direction; a plurality of first region wirings provided between the first region memory cells; a plurality of second region memory cells provided in the layers, the second region memory cells being provided above a rectangular shaped second region having a third side parallel to the first direction and a fourth side parallel to the second direction when viewed from the third direction; a plurality of second region wirings provided between the second region memory cells; and a control circuit capable of executing a reading operation, wherein, in the reading operation, the control circuit performs reading from one of the first region memory cells provided in one of the layers and another one of the second region memory cells provided in another one of the layers.