A first current bin boundary for a first voltage bin on a first target die of a set of dies at a memory device is identified by accessing a block family metadata table including an entry for each block family of a memory device. The first current bin boundary corresponds to a first block family associated with the first voltage bin. A first bin boundary offset between the first block family and a second block family corresponding to a first new bin boundary for the first voltage bin is determined. The first bin boundary is determined based on a calibration scan performed for the first voltage bin. A first new bin boundary for the first voltage bin is determined on each die of the set of dies based on the first bin boundary offset.