Invention Application
- Patent Title: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND APPARATUS FOR PROCESSING SUBSTRATE USING PLASMA
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Application No.: US17393601Application Date: 2021-08-04
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Publication No.: US20220084829A1Publication Date: 2022-03-17
- Inventor: Joun Taek Koo , Seong Gil Lee , Wan Jae Park , Young Je Um , Dong Hun Kim , Ji Hwan Lee , Dong Sub Oh , Myoung Sub Noh , Du Ri Kim
- Applicant: SEMES Co., Ltd.
- Applicant Address: KR Chungcheongnam-do
- Assignee: SEMES Co., Ltd.
- Current Assignee: SEMES Co., Ltd.
- Current Assignee Address: KR Chungcheongnam-do
- Priority: KR10-2020-0116548 20200911
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/3065 ; H01L21/67 ; H01L27/11556 ; H01L27/11582
Abstract:
A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.
Information query
IPC分类:
