公开(公告)号：US20220090861A1

公开(公告)日：2022-03-24

申请号：US17366247

申请日：2021-07-02

申请人： SEMES Co., Ltd.

发明人： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC分类号： F27B9/02 ,  F27B17/00

摘要： A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US20220084829A1

公开(公告)日：2022-03-17

申请号：US17393601

申请日：2021-08-04

申请人： SEMES Co., Ltd.

发明人： Joun Taek Koo ,  Seong Gil Lee ,  Wan Jae Park ,  Young Je Um ,  Dong Hun Kim ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC分类号： H01L21/28 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

摘要： A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.