公开(公告)号：US20220090861A1

公开(公告)日：2022-03-24

申请号：US17366247

申请日：2021-07-02

Applicant: SEMES Co., Ltd.

Inventor： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: F27B9/02 ,  F27B17/00

Abstract: A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US11495467B2

公开(公告)日：2022-11-08

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk Goh ,  Jae Seong Lee ,  Do Youn Lim ,  Kuk Saeng Kim ,  Young Dae Chung ,  Tae Shin Kim ,  Jee Young Lee ,  Won Geun Kim ,  Ji Hoon Jeong ,  Kwang Sup Kim ,  Pil Kyun Heo ,  Yoon Ki Sa ,  Ye Rim Yeon ,  Hyun Yoon ,  Do Yeon Kim ,  Yong Jun Seo ,  Byeong Geun Kim ,  Young Je Um

IPC: H01L21/26 ,  H01L21/311 ,  H01L21/67 ,  H01L21/66

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

公开(公告)号：US12237151B2

公开(公告)日：2025-02-25

申请号：US17885543

申请日：2022-08-11

Applicant: SEMES CO., LTD.

Inventor： Seong Gil Lee ,  Young Je Um ,  Myoung Sub Noh ,  Dong Sub Oh ,  Min Sung Han ,  Dong Hun Kim ,  Wan Jae Park

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/02 ,  H01L21/3065

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

公开(公告)号：US12146710B2

公开(公告)日：2024-11-19

申请号：US17366247

申请日：2021-07-02

Applicant: SEMES Co., Ltd.

Inventor： Young Je Um ,  Joun Taek Koo ,  Wan Jae Park ,  Dong Hun Kim ,  Seong Gil Lee ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: F27B9/02 ,  F27B17/00

Abstract: A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

公开(公告)号：US20220084829A1

公开(公告)日：2022-03-17

申请号：US17393601

申请日：2021-08-04

Applicant: SEMES Co., Ltd.

Inventor： Joun Taek Koo ,  Seong Gil Lee ,  Wan Jae Park ,  Young Je Um ,  Dong Hun Kim ,  Ji Hwan Lee ,  Dong Sub Oh ,  Myoung Sub Noh ,  Du Ri Kim

IPC: H01L21/28 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.

公开(公告)号：US20220076925A1

公开(公告)日：2022-03-10

申请号：US17392586

申请日：2021-08-03

Applicant: SEMES Co., Ltd.

Inventor： Joun Yaek Koo ,  Seong Gil Lee ,  Dong Sub Oh ,  Ji Hwan Lee ,  Young Je Um ,  Dong Hun Kim ,  Wan Jae Park ,  Myoung Sub Noh ,  Du Ri Kim

IPC: H01J37/32 ,  H01L21/02 ,  B08B7/00 ,  H01L21/311

Abstract: A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.