- 专利标题： PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION
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申请号： US17552027申请日： 2021-12-15
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公开(公告)号： US20220109099A1公开(公告)日： 2022-04-07
- 发明人: Michael Rizzolo , Theodorus E. Standaert , Ashim Dutta , Dominik Metzler
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L27/22 ; H01L43/10 ; H01L45/00 ; H01L43/12 ; H01L27/24 ; H01L43/08
摘要：
A method for fabricating a semiconductor device includes forming a conductive shell layer along a memory stack and a patterned hardmask disposed on the memory stack, and etching the patterned hardmask, the conductive shell layer and the memory stack to form a structure including a central core surrounded by a conductive outer shell disposed on a patterned memory stack.
公开/授权文献
- US11812668B2 Pillar-based memory hardmask smoothing and stress reduction 公开/授权日：2023-11-07
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