Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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Application No.: US17507975Application Date: 2021-10-22
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Publication No.: US20220130690A1Publication Date: 2022-04-28
- Inventor: Toru Ihara , Satoru Tanaka , Gentaro Goshi , Masami Yamashita , Reijiro Yamanaka , Hideaki Kumashiro
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2020-178315 20201023
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
A substrate processing apparatus configured to dry a substrate with a processing fluid in a supercritical state includes: a processing vessel; a substrate holder configured to hold the substrate horizontally within the processing vessel; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line and connected to the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; and a bypass opening/closing valve configured to open or close the bypass line.
Information query
IPC分类: