公开(公告)号：US20220130690A1

公开(公告)日：2022-04-28

申请号：US17507975

申请日：2021-10-22

Applicant: Tokyo Electron Limited

Inventor： Toru Ihara ,  Satoru Tanaka ,  Gentaro Goshi ,  Masami Yamashita ,  Reijiro Yamanaka ,  Hideaki Kumashiro

IPC: H01L21/67

Abstract: A substrate processing apparatus configured to dry a substrate with a processing fluid in a supercritical state includes: a processing vessel; a substrate holder configured to hold the substrate horizontally within the processing vessel; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line and connected to the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; and a bypass opening/closing valve configured to open or close the bypass line.

公开(公告)号：US10851468B2

公开(公告)日：2020-12-01

申请号：US15458327

申请日：2017-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi Iino ,  Toru Ihara ,  Yoshihiro Kai ,  Yoichi Tokunaga

IPC: C25D17/08 ,  H01L21/687 ,  H01L21/67 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  H01L21/288 ,  H01L21/677

Abstract: A substrate processing apparatus includes a holding device that includes a conductive member and holds a substrate, a conduction path structure that includes a conductive material and positioned such that the conduction path structure is in contact with the holding device, a supply device that supplies a processing liquid to the substrate held by the holding device, and a grounding structure including a variable resistance device that changes a resistance such that the grounding structure has a first end portion connected the conduction path structure and a second end portion connected to a ground potential.

公开(公告)号：US11594427B2

公开(公告)日：2023-02-28

申请号：US17102502

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Toru Ihara ,  Gentaro Goshi ,  Masami Yamashita

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00

Abstract: A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

公开(公告)号：US20210159095A1

公开(公告)日：2021-05-27

申请号：US17102502

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Toru Ihara ,  Gentaro Goshi ,  Masami Yamashita

IPC: H01L21/67 ,  B08B7/00

Abstract: A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

公开(公告)号：US20230022814A1

公开(公告)日：2023-01-26

申请号：US17814267

申请日：2022-07-22

Applicant: Tokyo Electron Limited

Inventor： Saya Inoue ,  Satoru Tanaka ,  Shinichiro Shimomura ,  Toru Ihara ,  Satoshi Biwa

IPC: H01L21/67

Abstract: A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.