公开(公告)号：US11901197B2

公开(公告)日：2024-02-13

申请号：US17689199

申请日：2022-03-08

Applicant: Tokyo Electron Limited

Inventor： Masataka Gosho ,  Reijiro Yamanaka

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  H01L21/02101

Abstract: A substrate processing apparatus includes: a processing container to which a supercritical fluid is supplied, the processing container being configured to dry a substrate by replacing a drying liquid collected on the substrate with the supercritical fluid; a discharge line configured to discharge a mixed fluid containing the supercritical fluid and the drying liquid from an interior of the processing container; and a density detector configured to detect a density of the mixed fluid flowing through the discharge line.

公开(公告)号：US12237178B2

公开(公告)日：2025-02-25

申请号：US18392552

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Masataka Gosho ,  Reijiro Yamanaka

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus includes: a processing container to which a supercritical fluid is supplied, the processing container being configured to dry a substrate by replacing a drying liquid collected on the substrate with the supercritical fluid; a discharge line configured to discharge a mixed fluid containing the supercritical fluid and the drying liquid from an interior of the processing container; and a density detector configured to detect a density of the mixed fluid flowing through the discharge line.

公开(公告)号：US20220130690A1

公开(公告)日：2022-04-28

申请号：US17507975

申请日：2021-10-22

Applicant: Tokyo Electron Limited

Inventor： Toru Ihara ,  Satoru Tanaka ,  Gentaro Goshi ,  Masami Yamashita ,  Reijiro Yamanaka ,  Hideaki Kumashiro

IPC: H01L21/67

Abstract: A substrate processing apparatus configured to dry a substrate with a processing fluid in a supercritical state includes: a processing vessel; a substrate holder configured to hold the substrate horizontally within the processing vessel; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line and connected to the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; and a bypass opening/closing valve configured to open or close the bypass line.