Invention Application
- Patent Title: SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17669734Application Date: 2022-02-11
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Publication No.: US20220165554A1Publication Date: 2022-05-26
- Inventor: Katsuaki NATORI , Hiroshi TOYODA , Masayuki KITAMURA , Takayuki BEPPU
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2019-020713 20190207
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/285 ; H01L27/11582 ; H01L21/673 ; C23C16/455 ; C23C16/06 ; C23C16/44 ; C23C16/458 ; H01L21/28
Abstract:
A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.
Information query
