公开(公告)号：US20220165554A1

公开(公告)日：2022-05-26

申请号：US17669734

申请日：2022-02-11

Applicant: KIOXIA CORPORATION

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU

IPC: H01J37/32 ,  H01L21/285 ,  H01L27/11582 ,  H01L21/673 ,  C23C16/455 ,  C23C16/06 ,  C23C16/44 ,  C23C16/458 ,  H01L21/28

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

公开(公告)号：US20220085066A1

公开(公告)日：2022-03-17

申请号：US17459856

申请日：2021-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Koji YAMAKAWA ,  Takayuki BEPPU ,  Masayuki KITAMURA

IPC: H01L27/11582 ,  H01L27/11556

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

公开(公告)号：US20210066468A1

公开(公告)日：2021-03-04

申请号：US17003181

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Takayuki BEPPU ,  Masayuki KITAMURA ,  Hiroshi TOYODA ,  Katsuaki NATORI

IPC: H01L29/423 ,  H01L27/11582 ,  H01L29/49 ,  H01L21/28

Abstract: According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.

公开(公告)号：US20240130125A1

公开(公告)日：2024-04-18

申请号：US18343176

申请日：2023-06-28

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H10B43/27 ,  C23C16/06 ,  C23C16/56

CPC classification number: H10B43/27 ,  C23C16/06 ,  C23C16/56 ,  H01L21/28

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

公开(公告)号：US20210305275A1

公开(公告)日：2021-09-30

申请号：US17004251

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  C23C16/06 ,  C23C16/56

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.