公开(公告)号：US20230085314A1

公开(公告)日：2023-03-16

申请号：US17682829

申请日：2022-02-28

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA

IPC: H01L23/498 ,  H01L25/065

Abstract: A semiconductor device includes a substrate comprising a first interconnection configured to provide a first reference voltage, a second interconnection configured to provide a second reference voltage different from the first reference voltage, and at least one interconnection layer. The first interconnection comprises a plurality of first interconnection components that are provided in the interconnection layer. The second interconnection comprises a plurality of second interconnection components that are provided in the interconnection layer. The plurality of first interconnection components and the plurality of second interconnection components are alternately arranged in a first direction parallel to the interconnection layer.

公开(公告)号：US20220195594A1

公开(公告)日：2022-06-23

申请号：US17690243

申请日：2022-03-09

Applicant: KIOXIA CORPORATION

Inventor： Masayuki KITAMURA ,  Atsuko SAKATA ,  Satoshi WAKATSUKI

IPC: C23C16/44 ,  H01L21/285 ,  C23C16/458 ,  H01L21/205 ,  C30B29/06 ,  C23C16/455 ,  H01L21/768

Abstract: A semiconductor manufacturing apparatus includes a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas, and a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber. The semiconductor manufacturing apparatus further includes a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas, and a second path in which the trap is not provided and configured to exhaust the resultant gas from the reaction chamber.

公开(公告)号：US20210083057A1

公开(公告)日：2021-03-18

申请号：US16817814

申请日：2020-03-13

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA

IPC: H01L29/24 ,  H01L21/02

Abstract: A semiconductor device according to an embodiment includes an oxide film containing first element and a conductive film provided to be in contact with the oxide film, containing metal element and oxygen element, and having conductivity. A range of a volume density of the oxygen element in the conductive film is different between cases where the metal element are tungsten (W), molybdenum (Mo), titanium (Ti), chromium (Cr), vanadium (V), iron (Fe), copper (Cu), tantalum (Ta), or niobium (Nb).

公开(公告)号：US20210082944A1

公开(公告)日：2021-03-18

申请号：US16800163

申请日：2020-02-25

Applicant: Kioxia Corporation

Inventor： Jun IIJIMA ,  Masayoshi TAGAMI ,  Masayuki KITAMURA ,  Satoshi WAKATSUKI

IPC: H01L27/11575 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, a logic circuit provided on the substrate, a wiring layer including a plurality of wirings that are provided above the logic circuit, a first insulating film below the wiring layer, a plug, and a second insulating film. Each of the wirings contains copper and extends along a surface plane of the substrate in a first direction. The wirings are arranged along the surface plane of the substrate in a second direction different from the first direction. The plug extends through the first insulating film in a third direction crossing the first and second directions and is electrically connected to one of the wirings. The plug contains tungsten. The second insulating film is provided between the first insulating film and the plug.

公开(公告)号：US20220165554A1

公开(公告)日：2022-05-26

申请号：US17669734

申请日：2022-02-11

Applicant: KIOXIA CORPORATION

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU

IPC: H01J37/32 ,  H01L21/285 ,  H01L27/11582 ,  H01L21/673 ,  C23C16/455 ,  C23C16/06 ,  C23C16/44 ,  C23C16/458 ,  H01L21/28

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

公开(公告)号：US20210265266A1

公开(公告)日：2021-08-26

申请号：US17183617

申请日：2021-02-24

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Atsushi KATO ,  Hiroaki MATSUDA

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285

Abstract: A semiconductor device includes an interconnect including (i) a first layer, and (ii) a second layer provided on the first layer and including copper. The device also includes a plug provided on the interconnect and including (a) a third layer including titanium and nitrogen, and (b) a fourth layer provided on the third layer and including tungsten. A concentration of chlorine in the third layer is less than or equal to 5.0×1021 atoms/cm3, and a concentration of oxygen at the interface between the third layer and the fourth layer is less than or equal to 5.0×1021 atoms/cm3.

公开(公告)号：US20240081073A1

公开(公告)日：2024-03-07

申请号：US18459795

申请日：2023-09-01

Applicant: Kioxia Corporation

Inventor： Ryosuke UMINO ,  Daisuke IKENO ,  Masayuki KITAMURA ,  Akihiro KAJITA

IPC: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: A semiconductor device according to the present disclosure includes a first insulating film, a second insulating film, and a tungsten film provided between the first insulating film and the second insulating film, the tungsten film having a crystal particle, wherein a thickness T of the tungsten film in a first direction from the first insulating film toward the second insulating film and an average particle size APS of the crystal particle satisfy APS/T≤2 is satisfied.

公开(公告)号：US20230295801A1

公开(公告)日：2023-09-21

申请号：US17943695

申请日：2022-09-13

Applicant: Kioxia Corporation

Inventor： Shigeru KINOSHITA ,  Hiroshi TOYODA ,  Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Naomi FUKUMAKI

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/45529 ,  C23C16/34 ,  C23C16/403 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45544

Abstract: According to one embodiment, a film forming method includes alternately performing a first process including at least two times of a first sequence and a second process including at least one time of a second sequence. The first sequence includes supplying a film forming gas into a film forming chamber, supplying a first purge gas into the film forming chamber, supplying a first reduction gas into the film forming chamber, and supplying a second purge gas into the film forming chamber, in order, and the second sequence includes supplying a second reduction gas into the film forming chamber, and supplying a third purge gas into the film forming chamber, in order.

公开(公告)号：US20220085053A1

公开(公告)日：2022-03-17

申请号：US17466200

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Takuya HIROHASHI ,  Shigeru KINOSHITA ,  Hiroshi TOYOTA

IPC: H01L27/11578 ,  H01L27/11565 ,  G11C16/14

Abstract: According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.

公开(公告)号：US20240130125A1

公开(公告)日：2024-04-18

申请号：US18343176

申请日：2023-06-28

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H10B43/27 ,  C23C16/06 ,  C23C16/56

CPC classification number: H10B43/27 ,  C23C16/06 ,  C23C16/56 ,  H01L21/28

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.