Invention Application
- Patent Title: METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC
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Application No.: US17129854Application Date: 2020-12-21
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Publication No.: US20220199519A1Publication Date: 2022-06-23
- Inventor: Chia-Ching LIN , Sou-Chi CHANG , Kaan OGUZ , I-Cheng TUNG , Arnab SEN GUPTA , Ian A. YOUNG , Uygar E. AVCI , Matthew V. METZ , Ashish Verma PENUMATCHA , Anandi ROY
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02

Abstract:
Metal insulator metal capacitors are described. In an example, a metal-insulator-metal (MIM) capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. The first capacitor dielectric is or includes a perovskite high-k dielectric material. A second electrode plate is on the first capacitor dielectric and has a portion over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and has a portion over and parallel with the second electrode plate.
Information query
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