公开(公告)号：US20220199519A1

公开(公告)日：2022-06-23

申请号：US17129854

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Chia-Ching LIN ,  Sou-Chi CHANG ,  Kaan OGUZ ,  I-Cheng TUNG ,  Arnab SEN GUPTA ,  Ian A. YOUNG ,  Uygar E. AVCI ,  Matthew V. METZ ,  Ashish Verma PENUMATCHA ,  Anandi ROY

IPC: H01L23/522 ,  H01L49/02

Abstract: Metal insulator metal capacitors are described. In an example, a metal-insulator-metal (MIM) capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. The first capacitor dielectric is or includes a perovskite high-k dielectric material. A second electrode plate is on the first capacitor dielectric and has a portion over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and has a portion over and parallel with the second electrode plate.

公开(公告)号：US20230096347A1

公开(公告)日：2023-03-30

申请号：US17485202

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Kevin P. O'BRIEN ,  Tristan A. TRONIC ,  Anandi ROY ,  Ashish Verma PENUMATCHA ,  Carl H. NAYLOR ,  Kirby MAXEY ,  Sudarat LEE ,  Chelsey DOROW ,  Scott B. CLENDENNING ,  Uygar E. AVCI

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a sheet that is a semiconductor. In an embodiment a length dimension of the sheet and a width dimension of the sheet are greater than a thickness dimension of the sheet. In an embodiment, a gate structure is around the sheet, and a first spacer is adjacent to a first end of the gate structure, and a second spacer adjacent to a second end of the gate structure. In an embodiment, a source contact is around the sheet and adjacent to the first spacer, and a drain contact is around the sheet and adjacent to the second spacer.