Invention Application
- Patent Title: INTEGRATED HIGH EFFICIENCY GATE ON GATE COOLING
-
Application No.: US17344259Application Date: 2021-06-10
-
Publication No.: US20220223497A1Publication Date: 2022-07-14
- Inventor: Daniel CHANEMOUGAME , Lars LIEBMANN , Jeffrey SMITH , Paul GUTWIN
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L23/473
- IPC: H01L23/473 ; H01L25/00 ; H01L25/065 ; H01L25/18 ; H01L23/00

Abstract:
A microfabrication device is provided. The microfabrication device includes a combined substrate including a first substrate connected to a second substrate, the first substrate having first devices and the second substrate having second devices; fluidic passages formed at a connection point between the first substrate and the second substrate, the connection point including a wiring structure that electrically connects first devices to second devices and physically connects the first substrate to the second substrate; dielectric fluid added to the fluidic passages; and a circulating mechanism configured to circulate the dielectric fluid through the fluidic passages to transfer heat.
Public/Granted literature
- US11581242B2 Integrated high efficiency gate on gate cooling Public/Granted day:2023-02-14
Information query
IPC分类: