A method for manufacturing a semiconductor device with high productivity is provided. The method includes a step of forming a first insulator, a second insulator, and a third insulator in this order using a multi-chamber apparatus; a step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order using a multi-chamber apparatus; a step of forming a conductive film; a step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape; a step of forming a sixth insulator and an insulating film in this order using a multi-chamber apparatus; a step of planarizing the insulating film; a step of forming, in the insulating film and the sixth insulator, an opening where the second oxide is exposed; a step of forming a seventh insulator and a first conductor; and a step of forming an eighth insulator and a ninth insulator in this order using a multi-chamber apparatus.