公开(公告)号：US20220173228A1

公开(公告)日：2022-06-02

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuichi SATO ,  Atsushi SHIBAZAKI ,  Kazuki TANEMURA ,  Takashi HIROSE

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening. The fifth insulator is formed using a bias sputtering method.

公开(公告)号：US20220223721A1

公开(公告)日：2022-07-14

申请号：US17609629

申请日：2020-05-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takashi HIROSE ,  Atsushi SHIBAZAKI ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/56 ,  C23C14/34

Abstract: A method for manufacturing a semiconductor device with high productivity is provided. The method includes a step of forming a first insulator, a second insulator, and a third insulator in this order using a multi-chamber apparatus; a step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order using a multi-chamber apparatus; a step of forming a conductive film; a step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape; a step of forming a sixth insulator and an insulating film in this order using a multi-chamber apparatus; a step of planarizing the insulating film; a step of forming, in the insulating film and the sixth insulator, an opening where the second oxide is exposed; a step of forming a seventh insulator and a first conductor; and a step of forming an eighth insulator and a ninth insulator in this order using a multi-chamber apparatus.