公开(公告)号：US20150162477A1

公开(公告)日：2015-06-11

申请号：US14627298

申请日：2015-02-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takashi HIROSE ,  Naoto KUSUMOTO

IPC: H01L31/068 ,  H01L31/077 ,  H01L31/028

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

Abstract translation: 提供了具有改善的电特性的光电转换装置。 光电转换装置具有通过第一硅半导体层和第二硅半导体层的堆叠形成窗口层的结构，并且第二硅半导体层的载流子浓度高于第一硅半导体层，并且具有开口 。 通过开口对第一硅半导体层进行光照射而不通过第二硅半导体层; 因此，可以降低窗口层中的光吸收损失。

公开(公告)号：US20220173228A1

公开(公告)日：2022-06-02

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuichi SATO ,  Atsushi SHIBAZAKI ,  Kazuki TANEMURA ,  Takashi HIROSE

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening. The fifth insulator is formed using a bias sputtering method.

公开(公告)号：US20220416059A1

公开(公告)日：2022-12-29

申请号：US17641569

申请日：2020-09-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Yuichi SATO ,  Takashi HIROSE ,  Yuko TAKABAYASHI

IPC: H01L29/66 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

公开(公告)号：US20220278235A1

公开(公告)日：2022-09-01

申请号：US17634564

申请日：2020-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshinori ANDO ,  Ryota HODO ,  Takashi HIROSE

IPC: H01L29/786 ,  H01L27/108 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor. The plug is electrically connected to the first conductor. The first insulator and the second insulator are each formed using a metal oxide including an amorphous structure.

公开(公告)号：US20220271168A1

公开(公告)日：2022-08-25

申请号：US17628296

申请日：2020-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Takashi HIROSE ,  Yoshihiro KOMATSU ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

公开(公告)号：US20220223721A1

公开(公告)日：2022-07-14

申请号：US17609629

申请日：2020-05-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takashi HIROSE ,  Atsushi SHIBAZAKI ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/56 ,  C23C14/34

Abstract: A method for manufacturing a semiconductor device with high productivity is provided. The method includes a step of forming a first insulator, a second insulator, and a third insulator in this order using a multi-chamber apparatus; a step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order using a multi-chamber apparatus; a step of forming a conductive film; a step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape; a step of forming a sixth insulator and an insulating film in this order using a multi-chamber apparatus; a step of planarizing the insulating film; a step of forming, in the insulating film and the sixth insulator, an opening where the second oxide is exposed; a step of forming a seventh insulator and a first conductor; and a step of forming an eighth insulator and a ninth insulator in this order using a multi-chamber apparatus.

公开(公告)号：US20210167211A1

公开(公告)日：2021-06-03

申请号：US17047710

申请日：2019-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasumasa YAMANE ,  Takashi HIROSE ,  Teruyuki FUJI ,  Hajime KIMURA ,  Daigo SHIMADA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/51

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.