Invention Application
- Patent Title: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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Application No.: US17180876Application Date: 2021-02-22
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Publication No.: US20220238800A1Publication Date: 2022-07-28
- Inventor: Tai-Cheng Hou , Fu-Yu Tsai , Bin-Siang Tsai , Da-Jun Lin , Chau-Chung Hou , Wei-Xin Gao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110095432.5 20210125
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; H01L43/02
Abstract:
A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.
Public/Granted literature
- US11871677B2 Method for fabricating semiconductor device Public/Granted day:2024-01-09
Information query
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