Invention Application
- Patent Title: HIGH VOLTAGE SEMICONDUCTOR DEVICE
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Application No.: US17216642Application Date: 2021-03-29
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Publication No.: US20220271161A1Publication Date: 2022-08-25
- Inventor: Ling-Chun Chou , Te-Chi Yen , Yu-Hung Chang , Kun-Hsien Lee , Kai-Lin Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110191369.5 20210219
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08

Abstract:
A high voltage semiconductor device includes a semiconductor substrate, first and second deep well regions, and first and second well regions disposed in the semiconductor substrate. The second deep well region is located above the first deep well region. The first well region is located above the first deep well region. The second well region is located above the second deep well region. A conductivity type of the second deep well region is complementary to that of the first deep well region. A conductivity type of the second well region is complementary to that of the first well region and the second deep well region. A length of the second deep well region is greater than or equal to that of the second well region and less than that of the first deep well region. The first well region is connected with the first deep well region.
Public/Granted literature
- US11664450B2 High voltage semiconductor device Public/Granted day:2023-05-30
Information query
IPC分类: