公开(公告)号：US11664450B2

公开(公告)日：2023-05-30

申请号：US17216642

申请日：2021-03-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ling-Chun Chou ,  Te-Chi Yen ,  Yu-Hung Chang ,  Kun-Hsien Lee ,  Kai-Lin Lee

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7835 ,  H01L29/0653 ,  H01L29/086 ,  H01L29/0878

Abstract: A high voltage semiconductor device includes a semiconductor substrate, first and second deep well regions, and first and second well regions disposed in the semiconductor substrate. The second deep well region is located above the first deep well region. The first well region is located above the first deep well region. The second well region is located above the second deep well region. A conductivity type of the second deep well region is complementary to that of the first deep well region. A conductivity type of the second well region is complementary to that of the first well region and the second deep well region. A length of the second deep well region is greater than or equal to that of the second well region and less than that of the first deep well region. The first well region is connected with the first deep well region.

公开(公告)号：US20220271161A1

公开(公告)日：2022-08-25

申请号：US17216642

申请日：2021-03-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ling-Chun Chou ,  Te-Chi Yen ,  Yu-Hung Chang ,  Kun-Hsien Lee ,  Kai-Lin Lee

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08

Abstract: A high voltage semiconductor device includes a semiconductor substrate, first and second deep well regions, and first and second well regions disposed in the semiconductor substrate. The second deep well region is located above the first deep well region. The first well region is located above the first deep well region. The second well region is located above the second deep well region. A conductivity type of the second deep well region is complementary to that of the first deep well region. A conductivity type of the second well region is complementary to that of the first well region and the second deep well region. A length of the second deep well region is greater than or equal to that of the second well region and less than that of the first deep well region. The first well region is connected with the first deep well region.

公开(公告)号：US20230253497A1

公开(公告)日：2023-08-10

申请号：US18135198

申请日：2023-04-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ling-Chun Chou ,  Te-Chi Yen ,  Yu-Hung Chang ,  Kun-Hsien Lee ,  Kai-Lin Lee

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/7835 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0653

Abstract: A high voltage semiconductor device includes a semiconductor substrate, first and second deep well regions, and first and second well regions disposed in the semiconductor substrate. The second deep well region is located above the first deep well region. The first well region is located above the first deep well region. The second well region is located above the second deep well region. A conductivity type of the second deep well region is complementary to that of the first deep well region. A conductivity type of the second well region is complementary to that of the first well region and the second deep well region. A length of the second deep well region is greater than or equal to that of the second well region and less than that of the first deep well region. The first well region is connected with the first deep well region.