Invention Application
- Patent Title: MICROWAVE PLASMA PROCESSING APPARATUS
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Application No.: US17663907Application Date: 2022-05-18
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Publication No.: US20220277935A1Publication Date: 2022-09-01
- Inventor: Taro IKEDA , Tomohito KOMATSU , Eiki KAMATA , Mikio SATO
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2017-239892 20171214,JP2018-198732 20181022
- Main IPC: H01J37/32
- IPC: H01J37/32 ; B01J19/08 ; H05H1/46 ; C23C16/511

Abstract:
A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.
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