公开(公告)号：US20250104972A1

公开(公告)日：2025-03-27

申请号：US18885134

申请日：2024-09-13

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Kenta KATO ,  Taro IKEDA

IPC: H01J37/32

Abstract: Provided is a plasma source comprising: a housing that defines a plasma generation space; a gas inlet port disposed in the housing to introduce a gas; a supply port disposed in the housing to supply active species of plasma produced from the gas in the plasma generation space; an ignition power supply port disposed in the housing to supply a radio-frequency (RF) power for igniting the plasma in the plasma generation space; and a maintenance power supply port disposed in the housing to supply the RF power for maintaining the plasma ignited in the plasma generation space.

公开(公告)号：US20240030015A1

公开(公告)日：2024-01-25

申请号：US18353747

申请日：2023-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA

IPC: H01J37/32 ,  G05B15/02

CPC classification number: H01J37/3299 ,  G05B15/02 ,  H01J2237/24578

Abstract: There is a plasma processing apparatus comprising: a processing container in which a mounting table on which a substrate is mounted is arranged and plasma processing is performed; a plurality of sensors for detecting a state of plasma generated in the processing container; and a controller for estimating a state of plasma in the processing container based on the state of plasma obtained from the plurality of sensors, wherein the controller obtains a two-dimensional distribution representing the state of plasma with respect to installation positions of the plurality of sensors, from data obtained from the plurality of sensors, and estimates the state of plasma in the processing container based on the obtained two-dimensional distribution.

公开(公告)号：US20230335876A1

公开(公告)日：2023-10-19

申请号：US18026103

申请日：2021-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Eiki KAMATA

IPC: H01P3/06 ,  H01J37/32

CPC classification number: H01P3/06 ,  H01J37/3222

Abstract: There is provided a tuner that forms a part of an electromagnetic wave transmission path for supplying electromagnetic waves from a power supply to a load, and that matches an impedance on a power supply side and an impedance on a load side, comprising: a coaxial line including a cylindrical inner conductor and a cylindrical outer conductor disposed coaxially outside the inner conductor; an annular first dielectric constant changing material disposed in a space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; an annular second dielectric constant changing material spaced apart from the first dielectric constant changing material in a line length direction of the coaxial line, disposed in the space between the inner conductor and the outer conductor of the coaxial line, and having a variable dielectric constant; a first power supply portion configured to supply power to the first dielectric constant changing material; and a second power supply portion configured to supply power to the second dielectric constant changing material.

公开(公告)号：US20230238219A1

公开(公告)日：2023-07-27

申请号：US18008008

申请日：2021-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Taro IKEDA ,  Satoru KAWAKAMI ,  Takumi KABE

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/334

Abstract: This plasma processing apparatus for performing plasma processing on an end part of a substrate includes a processing container, a substrate supporting member configured to support a portion of the substrate and to which a high frequency power is applied, at least a side of the substrate supporting member being composed of a dielectric, an opposing dielectric member composed of a dielectric and disposed to oppose the substrate supporting member, and a gas supply configured to supply a processing gas for generating plasma on at least the end part of the substrate. The plasma processing apparatus further includes a side ground electrode provided at a side of the substrate so as to be close to the substrate to such an extent that an electrical coupling is formed between an end surface of the substrate and the side ground electrode, the side ground electrode having a ground potential.

公开(公告)号：US20220230848A1

公开(公告)日：2022-07-21

申请号：US17576012

申请日：2022-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Eiki KAMATA ,  Yoshiyuki KONDO

IPC: H01J37/32

Abstract: Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

公开(公告)号：US20240170260A1

公开(公告)日：2024-05-23

申请号：US18282775

申请日：2022-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Mitsutoshi ASHIDA ,  Eiki KAMATA

IPC: H01J37/32 ,  H01J37/16 ,  H01L21/3065

CPC classification number: H01J37/32229 ,  H01J37/16 ,  H01L21/3065

Abstract: There is provided a plasma processing apparatus comprising: a processing container configured such that a substrate is subjected to plasma processing; a dielectric top plate which is quadrangular and which is provided to close an upper opening of the processing container; and a conductor plate supporting the dielectric top plate and having four electromagnetic wave emitting ports for emitting electromagnetic waves to the dielectric top plate. Each of the four electromagnetic wave emitting ports has a rectangular shape having long side and short side, the electromagnetic wave emitting ports are arranged such that the long side of each of the four electromagnetic wave emitting ports are parallel to the closest side among four sides of the dielectric top plate forming the quadrangular shape, and the long sides of the two electromagnetic wave emitting ports oriented in a same direction do not overlap each other in the same direction.

公开(公告)号：US20230343561A1

公开(公告)日：2023-10-26

申请号：US17766379

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Masashi IMANAKA ,  Eiki KAMATA ,  Taro IKEDA ,  Shigenori OZAKI ,  Soudai EMORI

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/32238 ,  H01J2237/327

Abstract: There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

公开(公告)号：US20230066120A1

公开(公告)日：2023-03-02

申请号：US17893621

申请日：2022-08-23

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Mikio SATO ,  Taro IKEDA ,  Mitsutoshi ASHIDA

IPC: H01J37/32

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

公开(公告)号：US20220199369A1

公开(公告)日：2022-06-23

申请号：US17599912

申请日：2020-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Mikio SATO ,  Taro IKEDA ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

Abstract: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

公开(公告)号：US20210074517A1

公开(公告)日：2021-03-11

申请号：US17010035

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Mikio SATO ,  Eiki KAMATA

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.