公开(公告)号：US20180114677A1

公开(公告)日：2018-04-26

申请号：US15793856

申请日：2017-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito KOMATSU ,  Shigenori OZAKI ,  Yutaka FUJINO ,  Jun NAKAGOMI

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

公开(公告)号：US20140158302A1

公开(公告)日：2014-06-12

申请号：US14095563

申请日：2013-12-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Shigeru KASAI ,  Hiroyuki MIYASHITA ,  Yuki OSADA ,  Akira TANIHARA ,  Yutaka FUJINO

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32201

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract translation: 微波辐射天线包括具有微波辐射表面的天线体; 处理气体入口，被配置为将处理气体引入到天线体中; 气体扩散空间，其构造成将所述处理气体扩散到所述天线体中; 多个气体出口，其设置在所述天线体中并且被配置为将所述处理气体排出到所述室中; 在槽与气体扩散空间和气体出口分离的状态下设置在天线体中的多个槽; 以及设置在天线体的微波辐射面侧的环状电介质部件，以覆盖形成槽的槽形成区域。 通过微波辐射通过狭缝和环形电介质构成的微波辐射表面形成金属表面波，并通过金属表面波产生表面波等离子体。

公开(公告)号：US20160358757A1

公开(公告)日：2016-12-08

申请号：US15165388

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU

IPC: H01J37/32

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.

Abstract translation: 一种用于通过将微波辐射到等离子体处理装置的腔室中而形成表面波等离子体的微波等离子体源包括：微波输出部分; 微波发送部，被配置为发送从所述微波输出部输出的微波; 以及微波辐射部件，被配置为将微波辐射到所述室中，其中所述微波传输部分包括被配置为将所述微波引入到所述微波辐射部件中的微波引入机构。 微波辐射构件包括：金属主体; 安装在所述主体的一部分中的电介质慢波部件; 多个狭槽，被配置为辐射通过介电慢波件导入的微波; 以及介电微波传输构件，安装在面向主体中的腔室的部分中以覆盖形成狭槽的区域; 以及安装成彼此分离的多个电介质层。

公开(公告)号：US20190075644A1

公开(公告)日：2019-03-07

申请号：US16124065

申请日：2018-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Jun NAKAGOMI

IPC: H05H1/46 ,  C23C16/511 ,  H01J37/32

Abstract: A plasma processing apparatus, for converting a gas into plasma by using microwaves microwaves and processing a target object in a processing chamber, includes a microwave introducing surface and a plurality of gas injection holes. Microwaves from a microwave introducing unit are introduced through microwave introducing surface and surface waves of the microwaves propagate on the microwave introducing surface. The gas injection holes are arranged at predetermined intervals within a predetermined range from a boundary line between the microwave introducing surface and a surface of the processing chamber that is adjacent to the microwave introducing surface.

公开(公告)号：US20160222516A1

公开(公告)日：2016-08-04

申请号：US14917414

申请日：2014-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Shigeru KASAI ,  Emiko HARA ,  Yutaka FUJINO ,  Yuki OSADA ,  Jun NAKAGOMI ,  Tomohito KOMATSU

IPC: C23C16/511 ,  C23C16/455 ,  H01J37/32

Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Abstract translation: 等离子体处理装置通过利用供给的微波在表面波形成的喷淋板的表面波上产生等离子体来进行处理，该等离子体处理装置包括配备有用于将第一和第二气体供给到处理容器中的喷淋板的等离子体发生天线， 安装成从淋浴板的下端面向下方突出的下垂部件。 下垂构件的外表面从顶端到底端向外扩散。 淋浴板包括第一和第二气体供应孔，第一和第二气体分别通过第一和第二气体供应孔被供应到处理容器中。 第一气体供给孔设置在下垂构件的外表面的内侧。 第二气体供给孔设置在下垂构件的外表面的外侧。

公开(公告)号：US20150170881A1

公开(公告)日：2015-06-18

申请号：US14566117

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito KOMATSU ,  Taro IKEDA ,  Yutaka FUJINO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

Abstract: A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

Abstract translation: 一种在等离子体处理装置的腔室中辐射微波以产生表面波等离子体的微波等离子体源包括：微波输出单元，被配置为产生和输出微波;微波提供单元，被配置为从微波输出单元传输微波输出;以及 微波辐射构件，其构造为所述室的顶壁，并且被配置为将从所述微波供应单元供应的微波辐射到所述室中。 微波供给单元包括沿圆周方向设置的微波引入机构，从而将微波引入微波辐射构件。 微波辐射构件包括具有微波辐射穿过的槽的微波辐射构件的槽天线。 这些槽整体形成为圆形。 微波传输部件设置成形成圆环状。

公开(公告)号：US20220277935A1

公开(公告)日：2022-09-01

申请号：US17663907

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Eiki KAMATA ,  Mikio SATO

IPC: H01J37/32 ,  B01J19/08 ,  H05H1/46 ,  C23C16/511

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.

公开(公告)号：US20190189398A1

公开(公告)日：2019-06-20

申请号：US16214613

申请日：2018-12-10

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Eiki KAMATA ,  Mikio SATO

IPC: H01J37/32 ,  C23C16/511 ,  H05H1/46 ,  B01J19/08

CPC classification number: H01J37/32192 ,  B01J19/08 ,  C23C16/511 ,  H05H1/46

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave, and a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part. A microwave transmission member is provided to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna via the microwave emission member. The ceiling has at least one recess having a depth in a range of λsp/4±λsp/8 on an outer side of the opening when a wavelength of a surface wave of the microwave traveling through the microwave transmission member and propagating along a surface of the ceiling from the opening is taken as λsp.

公开(公告)号：US20190074166A1

公开(公告)日：2019-03-07

申请号：US16122226

申请日：2018-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Yuki OSADA ,  Hiroyuki MIYASHITA ,  Susumu SAITO ,  Kazuhiro FURUKI ,  Mikio SATO ,  Eiki KAMATA

IPC: H01J37/32

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

公开(公告)号：US20180337023A1

公开(公告)日：2018-11-22

申请号：US15981246

申请日：2018-05-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Jun NAKAGOMI ,  Kei NAGAYOSI

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/455

Abstract: A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ⅛ or less of a wavelength of a surface wave of a microwave in the plasma.