Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
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Application No.: US17225066Application Date: 2021-04-07
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Publication No.: US20220302279A1Publication Date: 2022-09-22
- Inventor: Chia-Wei Chang , Chia-Ming Kuo , Po-Jen Chuang , Fu-Jung Chuang , Shao-Wei Wang , Yu-Ren Wang , Chia-Yuan Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: TW110110033 20210319
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/78 ; H01L29/08 ; H01L29/24 ; H01L21/28 ; H01L21/02 ; H01L29/66
Abstract:
A semiconductor device includes substrate having a fin structure thereon, a gate structure overlying the fin structure, a polymer block at a corner between the gate structure and the fin structure, and a source/drain region on the fin structure. The polymer block includes a nitridation layer in proximity to a sidewall of the gate structure.
Public/Granted literature
- US11545557B2 Semiconductor device and fabrication method thereof Public/Granted day:2023-01-03
Information query
IPC分类:
