发明申请
- 专利标题： TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE OPERATIONS
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申请号： US17217767申请日： 2021-03-30
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公开(公告)号： US20220319588A1公开(公告)日： 2022-10-06
- 发明人: John Rozen , Seyoung Kim , Paul Michael Solomon
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; G11C13/00 ; H01L45/00
摘要：
An embodiment of the invention may include a memory structure. The memory structure may include a first terminal connected to a first contact. The memory structure may include a second terminal connected to a second contact and a third contact. The memory structure may include a multi-level nonvolatile electrochemical cell having a variable resistance channel and a programming gate. The memory structure may include the first contact and second contact connected to the variable resistance channel. The memory structure may include the third contact is connected to the programming gate. This may enable decoupled read-write operations of the device.
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