- 专利标题： Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment
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申请号： US17809917申请日： 2022-06-30
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公开(公告)号： US20220336202A1公开(公告)日： 2022-10-20
- 发明人: Wei-Che Hsieh , Ching Yu Huang , Hsin-Hao Yeh , Chunyao Wang , Tze-Liang Lee
- 申请人： Taiwan Semiconductor Manufacturing Co.,Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co.,Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.,Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L21/8234 ; H01L21/033 ; H01L21/308
摘要：
A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.
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