Invention Application
- Patent Title: Semiconductor Device and Method of Manufacture
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Application No.: US17854683Application Date: 2022-06-30
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Publication No.: US20220336356A1Publication Date: 2022-10-20
- Inventor: Fong-Yuan Chang , Noor Mohamed Ettuveettil , Po-Hsiang Huang , Sen-Bor Jan , Ming-Fa Chen , Chin-Chou Liu , Yi-Kan Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; H01L23/00
Abstract:
Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.
Public/Granted literature
- US11923302B2 Semiconductor device and method of manufacture Public/Granted day:2024-03-05
Information query
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