Invention Application
- Patent Title: SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17850699Application Date: 2022-06-27
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Publication No.: US20220336492A1Publication Date: 2022-10-20
- Inventor: Yuta SAITO , Shinji MORI , Atsushi TAKAHASHI , Toshiaki YANASE , Keiichi SAWA , Kazuhiro MATSUO , Hiroyuki YAMASHITA
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2019-128985 20190711
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/02 ; H01L29/04

Abstract:
In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.
Public/Granted literature
- US11751397B2 Semiconductor storage device and method of manufacturing the same Public/Granted day:2023-09-05
Information query
IPC分类: