公开(公告)号：US20230200050A1

公开(公告)日：2023-06-22

申请号：US17841129

申请日：2022-06-15

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Ha HOANG ,  Atsuko SAKATA ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Yimin LIU

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/10805 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

公开(公告)号：US20230090044A1

公开(公告)日：2023-03-23

申请号：US17687407

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Shinji MORI ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kenichiro TORATANI

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first oxide semiconductor layer between the first electrode and the second electrode, the first oxide semiconductor layer containing in, Zn, and a first metal element, and the first metal element being at least one metal of Ga, Mg, or Mn, a second oxide semiconductor layer between the first oxide semiconductor layer and the second electrode, the second oxide semiconductor layer containing In, Zn, and the first metal element, a third oxide semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, the third oxide semiconductor layer containing in, Zn, and a second metal element, the second metal element being at least one metal of Al, Hf, La, Sn, Ta, Ti, W, Y, or Zr, a gate electrode facing the third oxide semiconductor layer, and a gate insulating.

公开(公告)号：US20220246640A1

公开(公告)日：2022-08-04

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi SAWA ,  Kazuhiro MATSUO ,  Kazuhisa MATSUDA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Shinji MORI ,  Masayuki TANAKA ,  Kenichiro TORATANI ,  Atsushi TAKAHASHI ,  Shouji HONDA

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11519

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US20240074172A1

公开(公告)日：2024-02-29

申请号：US18181821

申请日：2023-03-10

Applicant: Kioxia Corporation

Inventor： Keiichi SAWA ,  Tomoyuki TAKEMOTO ,  Yuta KAMIYA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Tatsunori ISOGAI

IPC: H10B41/27 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor storage device includes a lower electrode layer, a lower insulator, an upper electrode layer and an upper insulator along a first direction. The device further includes a first insulator provided on a side of a second direction of the upper electrode layer, and a second insulator provided between the upper electrode layer and the lower/upper/first insulator. The device further includes a charge storage layer, a third insulator and a semiconductor layer sequentially provided on a side of the second direction of the first insulator. A side face of the first insulator on a side of the upper electrode layer has a convex shape, the charge storage layer includes a first portion having a first thickness, and a second portion having a second thickness less than the first thickness, and the first portion is in contact with the first insulator.

公开(公告)号：US20220336492A1

公开(公告)日：2022-10-20

申请号：US17850699

申请日：2022-06-27

Applicant: KIOXIA CORPORATION

Inventor： Yuta SAITO ,  Shinji MORI ,  Atsushi TAKAHASHI ,  Toshiaki YANASE ,  Keiichi SAWA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L21/02 ,  H01L29/04

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

公开(公告)号：US20220077183A1

公开(公告)日：2022-03-10

申请号：US17197305

申请日：2021-03-10

Applicant: Kioxia Corporation

Inventor： Takaumi MORITA ,  Hisashi OKUCHI ,  Keiichi SAWA ,  Hiroyuki YAMASHITA ,  Toshiaki YANASE ,  Tsubasa IMAMURA

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.

公开(公告)号：US20210305431A1

公开(公告)日：2021-09-30

申请号：US17022328

申请日：2020-09-16

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Shinji MORI ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Akifumi GAWASE

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/08 ,  H01L29/417 ,  H01L29/40 ,  H01L29/267

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

公开(公告)号：US20220336493A1

公开(公告)日：2022-10-20

申请号：US17854072

申请日：2022-06-30

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Keiichi SAWA ,  Kazuhisa MATSUDA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L21/324 ,  H01L23/532 ,  H01L21/28

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

公开(公告)号：US20230164998A1

公开(公告)日：2023-05-25

申请号：US17887766

申请日：2022-08-15

Applicant: Kioxia Corporation

Inventor： Junichi KANEYAMA ,  Keiichi SAWA ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L29/513 ,  H01L29/40117

Abstract: A semiconductor device includes a plurality of electrode layers separated from each other in a first direction, a charge storage layer provided on side surfaces of the plurality of electrode layers via a first insulating film, and a semiconductor layer provided on a side surface of the charge storage layer via a second insulating film. The charge storage layer includes a location having a fluorine concentration of 5.0 x 1018 atoms/cm3. or less. A fluorine concentration at an interface between the charge storage layer and the second insulating film is 10 times or more or 1 / 10 or less of a fluorine concentration at an interface between the charge storage layer and the first insulating film.

公开(公告)号：US20220302160A1

公开(公告)日：2022-09-22

申请号：US17410711

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki YAMASHITA ,  Keiichi SAWA ,  Yasushi NAKASAKI ,  Takamitsu ISHIHARA ,  Junichi KANEYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate alternating with plurality of gaps or insulating layers. A charge storage film is provided on a side surface of each of the plurality of electrode films with a first insulating film placed therebetween. A semiconductor film is provided on a side surface of the charge storage film with a second insulating film placed therebetween. Furthermore, a concentration of a first element in the charge storage film adjacent to each gap or insulating film is higher than a concentration of the first element in the charge storage film adjacent to each electrode film. The first element is one of boron, niobium, or molybdenum.