Invention Application
- Patent Title: GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS
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Application No.: US17860056Application Date: 2022-07-07
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Publication No.: US20220344519A1Publication Date: 2022-10-27
- Inventor: Ayan KAR , Saurabh MORARKA , Carlos NIEVA-LOZANO , Kalyan KOLLURU , Biswajeet GUHA , Chung-Hsun LIN , Brian GREENE , Tahir GHANI
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L29/06 ; H01L29/66 ; H01L21/02

Abstract:
Gate-all-around integrated circuit structures including varactors are described. For example, an integrated circuit structure includes a varactor structure on a semiconductor substrate. The varactor structure includes a plurality of discrete vertical arrangements of horizontal nanowires. A plurality of gate stacks is over and surrounding corresponding ones of the plurality of discrete vertical arrangements of horizontal nanowires. The integrated circuit structure also includes a tap structure adjacent to the varactor structure on the semiconductor substrate. The tap structure includes a plurality of merged vertical arrangements of horizontal nanowires. A plurality of semiconductor structures is over and surrounding corresponding ones of the plurality of merged vertical arrangements of horizontal nanowires.
Public/Granted literature
- US11869987B2 Gate-all-around integrated circuit structures including varactors Public/Granted day:2024-01-09
Information query
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