发明申请
- 专利标题: MEMORY SYSTEM
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申请号: US17862815申请日: 2022-07-12
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公开(公告)号: US20220345132A1公开(公告)日: 2022-10-27
- 发明人: Seung Ho LEE
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2017-0063919 20170524
- 主分类号: H03K19/003
- IPC分类号: H03K19/003 ; H03K19/17788 ; H03K19/017 ; H03K19/00
摘要:
An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The pad is for transmitting and receiving signals. The open-drain driving circuit may output a transmission signal to the pad. The high-voltage protection unit may input a received signal from the pad. The control unit may control the open-drain driving circuit and the high-voltage protection unit. The control unit may include a gate control logic, a transmission control logic and an inverter. The gate control logic may receive a voltage of the pad and output a feedback voltage to the open-drain driving circuit. The transmission control logic may receive a clock signal and an enable signal, and transfer a first control signal to the open-drain driving circuit. The inverter may invert the enable signal and transfer an inverted enable signal to the gate control logic.