INPUT/OUTPUT DRIVING CIRCUIT
    1.
    发明申请

    公开(公告)号:US20200244266A1

    公开(公告)日:2020-07-30

    申请号:US16849810

    申请日:2020-04-15

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    摘要: An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The open-drain driving circuit may be configured to output a transmission signal to the pad. The high-voltage protection unit may be configured to input a received signal from the pad. The control unit may include a gate control logic, a transmission control logic and an inverter for controlling the open-drain driving circuit. The control unit may also include a reception control logic and a well voltage generation unit for controlling the high-voltage protection unit.

    SEMICONDUCTOR APPARATUS
    2.
    发明申请

    公开(公告)号:US20200220536A1

    公开(公告)日:2020-07-09

    申请号:US16827584

    申请日:2020-03-23

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    IPC分类号: H03K17/22

    摘要: A semiconductor apparatus includes a data input and output (input/output) circuit configured to operate by receiving a first voltage, a core circuit configured operate by receiving a second voltage, and a control circuit configured to output a power control signal for activating the data input/output circuit when the first voltage is higher than a first set voltage and the second voltage is higher a second set voltage.

    SEMICONDUCTOR APPARATUS
    3.
    发明申请

    公开(公告)号:US20190372562A1

    公开(公告)日:2019-12-05

    申请号:US16227975

    申请日:2018-12-20

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    摘要: A semiconductor apparatus includes a first voltage detection circuit configured to generate a first voltage detection signal in response to the voltage level of a first voltage, a current control signal and a second voltage detection signal; and a storage and output circuit configured to generate a power control signal and the current control signal in response to the voltage detection signal.

    ELECTRONIC DEVICE
    5.
    发明申请

    公开(公告)号:US20220352712A1

    公开(公告)日:2022-11-03

    申请号:US17732337

    申请日:2022-04-28

    申请人: SK hynix Inc.

    IPC分类号: H02H9/04 H03K19/0185

    摘要: An electronic device uses, as power, a first voltage and a second voltage lower than the first voltage. The electronic device includes: an internal circuit configured to be driven by the second voltage, and output an output signal having a level corresponding to the second voltage; and an interface circuit configured to receive the output signal, the first voltage, and the second voltage, shift the output signal to a level corresponding to the first voltage, and provide the shifted output signal to a pad. The interface circuit includes an ESD (electrostatic discharge) block connected to the pad. The interface circuit further includes a plurality of transistors, and all of the transistors of the interface circuit are driven at the second voltage and broken at the first voltage.

    INTERFACE CIRCUIT AND SEMICONDUCTOR OUTPUT CIRCUIT DEVICE

    公开(公告)号:US20220231686A1

    公开(公告)日:2022-07-21

    申请号:US17713158

    申请日:2022-04-04

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    IPC分类号: H03K19/0185

    摘要: A device includes an interface circuit connected between a pad and an internal circuit. The interface circuit comprises a pull-up driver including first and second PMOS transistors and a first impedance controller. The first PMOS transistor is connected between a power terminal provided to a power voltage and a first connection node and controlled by a first control bias. The second PMOS transistor connected between the first connection node and the pad and normally turned-on, and the first impedance controller is connected to the first connection node to control an impedance thereof based on the first control bias. The interface circuit further includes a pull-down driver including first and second NMOS transistors. The first NMOS transistor is connected between the pad and a second connection node and controlled by a driving voltage, and the second NMOS transistor is connected between the second connection node and a ground voltage terminal.

    OUTPUT DRIVING CIRCUIT
    7.
    发明申请

    公开(公告)号:US20210409019A1

    公开(公告)日:2021-12-30

    申请号:US17076474

    申请日:2020-10-21

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    IPC分类号: H03K17/687 H03K3/356

    摘要: An output driving circuit may include a pull-up-pull-down driver connected to a pad, a level shifter operating based on a first power voltage and a second power voltage that is greater than the first power voltage, level shifting a data signal to generate a first control signal, and applying the first control signal to the pull-up-pull-down driver, and a driver control logic operating based on the first power voltage, generating a second control signal based on the data signal, and applying the second control signal to the pull-up-pull-down driver.

    OUTPUT DRIVING CIRCUIT
    8.
    发明申请

    公开(公告)号:US20180343008A1

    公开(公告)日:2018-11-29

    申请号:US15858516

    申请日:2017-12-29

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    摘要: The output driving circuit include a pull-down driver, an input/output (IO) control logic, a gate control logic, and an inverter. The pull-down driver includes first, second, and third transistors that are sequentially coupled between a pad and a ground node. The IO control logic is configured to receive a clock signal and an enable signal, and transfer a first control signal to the third transistor. The gate control logic is configured to receive a voltage of the pad and output a feedback voltage to a gate electrode of the first transistor. The inverter is configured to invert the enable signal and transfer an inverted enable signal to the gate control logic. Therefore, the reliability of the output driving circuit can be improved.

    MEMORY SYSTEM
    9.
    发明申请

    公开(公告)号:US20220345132A1

    公开(公告)日:2022-10-27

    申请号:US17862815

    申请日:2022-07-12

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    摘要: An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The pad is for transmitting and receiving signals. The open-drain driving circuit may output a transmission signal to the pad. The high-voltage protection unit may input a received signal from the pad. The control unit may control the open-drain driving circuit and the high-voltage protection unit. The control unit may include a gate control logic, a transmission control logic and an inverter. The gate control logic may receive a voltage of the pad and output a feedback voltage to the open-drain driving circuit. The transmission control logic may receive a clock signal and an enable signal, and transfer a first control signal to the open-drain driving circuit. The inverter may invert the enable signal and transfer an inverted enable signal to the gate control logic.

    ELECTROSTATIC DISCHARGE CIRCUIT AND ELECTROSTATIC DISCHARGE CONTROL SYSTEM

    公开(公告)号:US20220238509A1

    公开(公告)日:2022-07-28

    申请号:US17362655

    申请日:2021-06-29

    申请人: SK hynix Inc.

    发明人: Seung Ho LEE

    摘要: An electrostatic discharge circuit may include a control voltage generation circuit, an electrostatic detection circuit, a driving control circuit and a discharge driving circuit. The control voltage generation circuit may generate first to third control voltages through a division operation on a supply voltage. The electrostatic detection circuit may set a first setup voltage based on the first control voltage, and detect static electricity transferred through the first setup voltage. The driving control circuit may set a second setup voltage based on the second control voltage, and generate a driving control signal. The discharge driving circuit may set a third setup voltage based on the third control voltage, and perform a discharge operation on static electricity.