Invention Application
- Patent Title: LATERAL POWER SEMICONDUCTOR DEVICE
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Application No.: US17351267Application Date: 2021-06-18
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Publication No.: US20220352304A1Publication Date: 2022-11-03
- Inventor: Ming QIAO , Shuhao ZHANG , Zhangyi'an YUAN , Dican HOU , Bo ZHANG
- Applicant: University of Electronic Science and Technology of China
- Applicant Address: CN Chengdu
- Assignee: University of Electronic Science and Technology of China
- Current Assignee: University of Electronic Science and Technology of China
- Current Assignee Address: CN Chengdu
- Priority: CN202110476270.X 20210429
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/08

Abstract:
A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.
Public/Granted literature
- US12027577B2 Lateral power semiconductor device Public/Granted day:2024-07-02
Information query
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