Invention Application
- Patent Title: Semiconductor Device and Method of Forming the Same
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Application No.: US17869003Application Date: 2022-07-20
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Publication No.: US20220359331A1Publication Date: 2022-11-10
- Inventor: Chih-Chien Pan , Chin-Fu Kao , Li-Hui Cheng , Szu-Wei Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L25/065 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L21/768 ; H01L23/00
Abstract:
A method of forming a semiconductor device includes attaching a first semiconductor device to a first surface of a substrate; forming a sacrificial structure on the first surface of the substrate around the first semiconductor device, the sacrificial structure encircling a first region of the first surface of the substrate; and forming an underfill material in the first region.
Public/Granted literature
- US11901255B2 Semiconductor device and method of forming the same Public/Granted day:2024-02-13
Information query
IPC分类:
