Invention Application
- Patent Title: Geometric Mask Rule Check With Favorable and Unfavorable Zones
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Application No.: US17386737Application Date: 2021-07-28
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Publication No.: US20220365419A1Publication Date: 2022-11-17
- Inventor: Shih-Ming Chang , Shinn-Sheng Yu , Jue-Chin Yu , Ping-Chieh Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: CN Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: CN Hsinchu
- Main IPC: G03F1/36
- IPC: G03F1/36 ; G03F7/20 ; H01L21/027

Abstract:
A method includes generating a diffraction map from a plurality of target patterns, generating a favorable zone and an unfavorable zone from the diffraction map, placing a plurality of sub-resolution patterns in the favorable zone, and performing a plurality of geometric operations on the plurality of sub-resolution patterns to generate modified sub-resolution patterns. The modified sub-resolution patterns extend into the favorable zone, and are away from the unfavorable zone.
Public/Granted literature
- US11714951B2 Geometric mask rule check with favorable and unfavorable zones Public/Granted day:2023-08-01
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