Invention Application
- Patent Title: FABRICATING METHOD OF REDUCING PHOTORESIST FOOTING
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Application No.: US17316736Application Date: 2021-05-11
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Publication No.: US20220365433A1Publication Date: 2022-11-17
- Inventor: Hao-Hsuan Chang , Da-Jun Lin , Yao-Hsien Chung , Ting-An Chien , Bin-Siang Tsai , Chih-Wei Chang , Shih-Wei Su , Hsu Ting , Sung-Yuan Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Main IPC: G03F7/075
- IPC: G03F7/075 ; G03F7/20

Abstract:
A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.
Public/Granted literature
- US11762293B2 Fabricating method of reducing photoresist footing Public/Granted day:2023-09-19
Information query
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