Invention Application
- Patent Title: RUTHENIUM REMOVAL COMPOSITION AND METHOD OF PRODUCING MAGNETORESISTIVE RANDOM ACCESS MEMORY
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Application No.: US17820056Application Date: 2022-08-16
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Publication No.: US20220393104A1Publication Date: 2022-12-08
- Inventor: Keeyoung PARK , Atsushi MIZUTANI
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM CORPORATION
- Current Assignee: FUJIFILM CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2014-222540 20141031
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L21/3065 ; H01L21/308 ; H01L43/08 ; H01L27/105 ; C23F1/40 ; C23F4/00 ; C23F1/30
Abstract:
A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.
Public/Granted literature
- US12150386B2 Ruthenium removal composition and method of producing magnetoresistive random access memory Public/Granted day:2024-11-19
Information query
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