公开(公告)号：US20170365486A1

公开(公告)日：2017-12-21

申请号：US15643942

申请日：2017-07-07

Applicant: FUJIFILM Corporation

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02057

Abstract: Provided are a pattern processing method for applying a pretreatment liquid for modifying the surface of a pattern structure to a semiconductor substrate provided with the pattern structure, which has at least one of polysilicon, amorphous silicon, Ge, or a low dielectric constant material having a k value of 2.4 or less, a method for manufacturing a semiconductor substrate product, and a pretreatment liquid for a pattern structure.

公开(公告)号：US20200295258A1

公开(公告)日：2020-09-17

申请号：US16890505

申请日：2020-06-02

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US20170229308A1

公开(公告)日：2017-08-10

申请号：US15497224

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L21/304 ,  C11D3/04 ,  H01L27/105 ,  C11D3/30 ,  H01L21/027 ,  H01L43/12 ,  C11D17/08 ,  C11D3/26

CPC classification number: H01L21/304 ,  B41N3/08 ,  C11D3/04 ,  C11D3/26 ,  C11D3/30 ,  C11D17/08 ,  G03F7/40 ,  H01L21/027 ,  H01L27/105 ,  H01L28/00 ,  H01L43/12

Abstract: An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability.The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.

公开(公告)号：US20170222138A1

公开(公告)日：2017-08-03

申请号：US15488523

申请日：2017-04-17

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  C23F1/30 ,  H01L43/08

CPC classification number: H01L43/12 ,  C23F1/30 ,  C23F1/40 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/105 ,  H01L43/08

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

公开(公告)号：US20220393104A1

公开(公告)日：2022-12-08

申请号：US17820056

申请日：2022-08-16

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US20190148634A1

公开(公告)日：2019-05-16

申请号：US16245570

申请日：2019-01-11

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung PARK ,  Atsushi MIZUTANI

IPC: H01L43/12 ,  C23F1/40 ,  C23F4/00 ,  H01L27/105 ,  C23F1/30 ,  H01L21/308 ,  H01L21/3065 ,  H01L43/08

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.