公开(公告)号：US11943865B2

公开(公告)日：2024-03-26

申请号：US17424935

申请日：2019-11-13

Applicant: Chasm Advanced Materials, Inc.

Inventor： Richard P. Heroux ,  Timothy Alan Turner ,  David Joseph Arthur ,  Sean Patrick Arthur

IPC: B41C1/14 ,  C23F1/40 ,  H01B1/24 ,  H05K1/09 ,  H05K3/06

CPC classification number: H05K1/092 ,  B41C1/14 ,  C23F1/40 ,  H01B1/24 ,  H05K3/067

Abstract: A transparent conductive film (TCF) and methods for creating the TCF. The TCF includes a substrate having a surface, a metal mesh layer over at least a portion of the surface of the substrate, and a conductive layer over the metal mesh layer. The conductive layer includes carbon nanotubes and a binder.

公开(公告)号：US11898081B2

公开(公告)日：2024-02-13

申请号：US17095159

申请日：2020-11-11

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Takuya Ohhashi ,  Yukihisa Wada

IPC: C09K13/04 ,  H01L21/48 ,  C09K13/00 ,  H01L21/3213 ,  C23F1/14 ,  C23F1/40 ,  C23F1/00 ,  H01L21/306

CPC classification number: C09K13/04 ,  C09K13/00 ,  C23F1/00 ,  C23F1/14 ,  C23F1/40 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/4892

Abstract: A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

公开(公告)号：US11456412B2

公开(公告)日：2022-09-27

申请号：US16890505

申请日：2020-06-02

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US20210388508A1

公开(公告)日：2021-12-16

申请号：US17261387

申请日：2020-07-08

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C23F1/40 ,  H01L21/306

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

公开(公告)号：US20210355586A1

公开(公告)日：2021-11-18

申请号：US17390579

申请日：2021-07-30

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Naoko MIKAMI ,  Sumika TAMURA ,  Reiji TERADA ,  Masashi KURATA ,  Daisei FUJITO ,  Kiyoaki NISHITSUJI ,  Takehiro NISHI

IPC: C23F1/28 ,  B21B1/22 ,  B21B3/02 ,  B32B15/01 ,  B32B15/04 ,  C23C14/04 ,  C23C14/34 ,  C23C16/04 ,  C23F1/16 ,  C23F1/40 ,  H01L51/00 ,  C23C14/24

Abstract: A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 μm or less by etching the processing object by 3 μm or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet.

公开(公告)号：US11111585B2

公开(公告)日：2021-09-07

申请号：US15786446

申请日：2017-10-17

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Naoko Mikami ,  Sumika Tamura ,  Reiji Terada ,  Masashi Kurata ,  Daisei Fujito ,  Kiyoaki Nishitsuji ,  Takehiro Nishi

IPC: C23F1/28 ,  C23C14/24 ,  C23C14/34 ,  C23F1/16 ,  B21B1/22 ,  B21B3/02 ,  B32B15/01 ,  B32B15/04 ,  C23C14/04 ,  C23C16/04 ,  C23F1/40 ,  H01L51/00

Abstract: A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 μm or less by etching the processing object by 3 μm or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet.

公开(公告)号：US09786469B2

公开(公告)日：2017-10-10

申请号：US15233176

申请日：2016-08-10

Applicant: University of Washington

Inventor： Liguo Wang

IPC: H01J37/20 ,  H01J37/16 ,  H01J37/26 ,  C23F1/40 ,  C23F4/00

CPC classification number: H01J37/16 ,  C23F1/40 ,  C23F4/00 ,  H01J37/20 ,  H01J37/26 ,  H01J37/261 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/2003 ,  H01J2237/2004

Abstract: A grid assembly for cryo-electron microscopy may be fabricated using standard nanofabrication processes. The grid assembly may comprise two support members, each support member comprising a silicon substrate coated with an electron-transparent silicon nitride layer. These two support members are positioned together with the silicon nitride layers facing each other with a rigid spacer layer disposed therebetween. The rigid spacer layer defines one or more chambers in which a biological sample may be provided and fast frozen with a high degree of control of the ice thickness.

公开(公告)号：US20170077523A1

公开(公告)日：2017-03-16

申请号：US14970052

申请日：2015-12-15

Applicant: POSTECH Academy-Industry Foundation ,  Hyundai Motor Company

Inventor： Won Keun KIM ,  Kyoung Han RYU ,  Jin Woo LEE ,  Jae Hyuk LEE ,  Ji Hee PARK ,  Joo Young JEONG

IPC: H01M4/92 ,  H01M12/08 ,  C23F1/40 ,  H01M4/88 ,  H01M4/86

CPC classification number: H01M4/921 ,  C23F1/40 ,  H01M4/8652 ,  H01M4/8814 ,  H01M4/886 ,  H01M4/8875 ,  H01M4/8878 ,  H01M4/8882 ,  H01M4/8889 ,  H01M12/08 ,  H01M2004/8689 ,  Y02E60/128

Abstract: Disclosed is a nanotubular intermetallic compound catalyst for a positive electrode of a lithium air battery and a method of preparing the same. In particular, a porous nanotubular intermetallic compound is simply prepared using electrospinning in which a dual nozzle is used, and, by using the same as a catalyst, a lithium air battery having enhanced discharge capacity, charge/discharge efficiency and lifespan is provided.

Abstract translation: 公开了一种用于锂空气电池的正极的纳米管状金属间化合物催化剂及其制备方法。 特别地，使用其中使用双喷嘴的静电纺丝简单地制备多孔纳米管金属间化合物，并且通过使用其作为催化剂，提供了具有增强的放电容量，充放电效率和寿命的锂空气电池。

公开(公告)号：US09566686B2

公开(公告)日：2017-02-14

申请号：US14965168

申请日：2015-12-10

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

IPC: B24B37/04 ,  C23F1/40 ,  H01L21/321 ,  C09G1/02

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150027978A1

公开(公告)日：2015-01-29

申请号：US14368714

申请日：2012-12-27

Applicant: Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

Inventor： Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

IPC: C09K13/10 ,  C09K13/08 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  C09K13/00 ,  C09K13/06

CPC classification number: C09K13/10 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D7/02 ,  C11D7/08 ,  C11D7/3209 ,  C11D11/0047 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract translation: 可用于相对于金属导电（例如钨）选择性去除氮化钛和/或光致抗蚀剂蚀刻残余材料的组合物，以及来自其上具有其的微电子器件的绝缘材料。 除去组合物含有至少一种氧化剂和一种蚀刻剂，可含有各种腐蚀抑制剂以确保选择性。