Invention Application
- Patent Title: METHOD FOR PARTICLE REMOVAL FROM WAFERS THROUGH PLASMA MODIFICATION IN PULSED PVD
-
Application No.: US17941137Application Date: 2022-09-09
-
Publication No.: US20230002885A1Publication Date: 2023-01-05
- Inventor: Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: C23C14/54
- IPC: C23C14/54 ; H01J37/34 ; C23C14/06 ; C23C14/35
Abstract:
Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
Public/Granted literature
- US11932934B2 Method for particle removal from wafers through plasma modification in pulsed PVD Public/Granted day:2024-03-19
Information query
IPC分类:
