Invention Application
- Patent Title: MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS WITH DIFFERENT CRYSTAL STRUCTURES
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Application No.: US17370613Application Date: 2021-07-08
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Publication No.: US20230009284A1Publication Date: 2023-01-12
- Inventor: Shinto ICHIKAWA , Katsuyuki NAKADA , Hiroaki SUKEGAWA , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
- Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Tokyo; JP Tsubaka-shi
- Assignee: TDK CORPORATION,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: TDK CORPORATION,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Tokyo; JP Tsubaka-shi
- Main IPC: G01R33/09
- IPC: G01R33/09 ; H01L43/10 ; H01L43/08 ; H01L43/02 ; G11B5/39 ; G11C11/16
Abstract:
A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.
Public/Granted literature
- US11585873B2 Magnetoresistive effect element containing two non-magnetic layers with different crystal structures Public/Granted day:2023-02-21
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