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公开(公告)号：US20190259937A1
公开(公告)日：2019-08-22
申请号：US16275947
申请日：2019-02-14
发明人： Shinto ICHIKAWA , Katsuyuki NAKADA , Seiji MITANI , Hiroaki SUKEGAWA , Kazuhiro HONO , Tadakatsu OHKUBO
摘要： Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x
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2.发明申请公开(公告)号：US20230009284A1
公开(公告)日：2023-01-12
申请号：US17370613
申请日：2021-07-08
发明人： Shinto ICHIKAWA , Katsuyuki NAKADA , Hiroaki SUKEGAWA , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
摘要： A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.
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公开(公告)号：US20170140784A1
公开(公告)日：2017-05-18
申请号：US15127527
申请日：2015-03-19
发明人： Hiroaki SUKEGAWA , Zhenchao WEN , Seiji MITANI , Koichiro INOMATA , Takao FURUBAYASHI , Jason Paul HADORN , Tadakatsu OHKUBO , Kazuhiro HONO , Jungwoo KOO
CPC分类号： G11B5/653 , G11B5/3909 , G11B5/65 , G11B5/656 , G11B5/66 , G11B5/7315 , G11B5/7325 , G11B5/8404 , G11B5/851 , G11C11/161 , H01F10/123 , H01F10/30 , H01F10/3286
摘要： Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
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4.发明申请公开(公告)号：US20160314825A1
公开(公告)日：2016-10-27
申请号：US15134514
申请日：2016-04-21
发明人： Hiroaki SUKEGAWA , Hwachol LEE , Kazuhiro HONO , Seiji MITANI , Tadakatsu OHKUBO , Jun LIU , Shinya KASAI , Kwangseok KIM
CPC分类号： G11C11/161 , H01F10/1933 , H01F10/3286 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided is a structure having a perpendicular magnetization film which is an (Mn1-x,Gax)4N1-y (0
摘要翻译： 本发明提供一种具有垂直磁化膜的结构，其是具有通过控制和引入形成的缺氮组合物的（Mn1-x，Gax）4N1-y（0
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公开(公告)号：US20210123991A1
公开(公告)日：2021-04-29
申请号：US16074135
申请日：2017-01-31
发明人： Hiroaki SUKEGAWA , Thomas SCHEIKE , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO , Kouichiro INOMATA
摘要： The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1-31 xAlx (0
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公开(公告)号：US20190172486A1
公开(公告)日：2019-06-06
申请号：US16214375
申请日：2018-12-10
发明人： Hiroaki SUKEGAWA , Zhenchao WEN , Seiji MITANI , Koichiro INOMATA , Takao FURUBAYASHI , Jason Paul HADORN , Tadakatsu OHKUBO , Kazuhiro HONO , Jungwoo KOO
IPC分类号： G11B5/65 , G11C11/16 , G11B5/39 , H01F10/32 , H01F10/30 , G11B5/73 , G11B5/66 , G11B5/84 , G11B5/851
摘要： Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.
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公开(公告)号：US20190237099A1
公开(公告)日：2019-08-01
申请号：US16311367
申请日：2017-06-23
发明人： Shinya KASAI , Yukiko TAKAHASHI , Pohan CHENG , IKHTIAR , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
IPC分类号： G11B5/39 , H01F10/13 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： G11B5/3909 , G11B5/39 , H01F10/13 , H01F10/132 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.
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公开(公告)号：US20180090671A1
公开(公告)日：2018-03-29
申请号：US15699749
申请日：2017-09-08
发明人： Yushi KATO , Tadaomi DAIBOU , Yuuzo KAMIGUCHI , Naoharu SHIMOMURA , Junichi ITO , Hiroaki SUKEGAWA , Mohamed BELMOUBARIK , Po-Han CHENG , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
CPC分类号： H01L43/08 , H01L27/228 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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